JPS6233013Y2 - - Google Patents
Info
- Publication number
- JPS6233013Y2 JPS6233013Y2 JP15822183U JP15822183U JPS6233013Y2 JP S6233013 Y2 JPS6233013 Y2 JP S6233013Y2 JP 15822183 U JP15822183 U JP 15822183U JP 15822183 U JP15822183 U JP 15822183U JP S6233013 Y2 JPS6233013 Y2 JP S6233013Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- adapter
- tube
- wall
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 239000010453 quartz Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15822183U JPS6067364U (ja) | 1983-10-13 | 1983-10-13 | 反応管洗浄用アダプタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15822183U JPS6067364U (ja) | 1983-10-13 | 1983-10-13 | 反応管洗浄用アダプタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6067364U JPS6067364U (ja) | 1985-05-13 |
| JPS6233013Y2 true JPS6233013Y2 (en]) | 1987-08-24 |
Family
ID=30348615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15822183U Granted JPS6067364U (ja) | 1983-10-13 | 1983-10-13 | 反応管洗浄用アダプタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6067364U (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254081A (ja) * | 1985-09-02 | 1987-03-09 | Toshiba Mach Co Ltd | 気相成長装置 |
| JP5077134B2 (ja) * | 2008-08-11 | 2012-11-21 | 株式会社Ｓｕｍｃｏ | 石英部材の洗浄方法 |
-
1983
- 1983-10-13 JP JP15822183U patent/JPS6067364U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6067364U (ja) | 1985-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6212789B1 (en) | Semiconductor device manufacturing system | |
| US5044314A (en) | Semiconductor wafer processing apparatus | |
| CN100353488C (zh) | 半导体器件的制造方法 | |
| Kern | The evolution of silicon wafer cleaning technology | |
| US4804560A (en) | Method of selectively depositing tungsten upon a semiconductor substrate | |
| US5954885A (en) | Cleaning method | |
| US7360546B2 (en) | Cleaning apparatus for semiconductor wafer | |
| JPH09293701A (ja) | 半導体を製造する方法 | |
| KR100808237B1 (ko) | 전이 유동에 의한 물체의 표면처리방법 | |
| JPS6233013Y2 (en]) | ||
| JPH09289174A (ja) | 半導体製造工程に用いられる拡散炉 | |
| JP4058669B2 (ja) | シリコン基板上への導電性珪化物層の形成方法および導電性珪化物接点の形成方法 | |
| US20030034053A1 (en) | Processing and cleaning method | |
| US6372650B2 (en) | Method of cleaning substrate and method of manufacturing semiconductor device | |
| JPS59166675A (ja) | エツチング装置 | |
| US8201517B2 (en) | Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth | |
| JPH05166776A (ja) | 半導体ウェーハの洗浄方法およびその装置 | |
| JPH1050615A (ja) | 枚葉式気相成長装置 | |
| JP3669728B2 (ja) | 酸化膜及びその形成方法、並びに半導体装置 | |
| JP3401585B2 (ja) | 基板の洗浄方法 | |
| JP3002205B2 (ja) | 窒化ガリウム系化合物半導体の表面加工方法 | |
| JPH01244622A (ja) | シリコン基板の処理装置 | |
| CN112216608B (zh) | 生成物层的处理方法 | |
| JPH04246827A (ja) | 半導体装置の製造方法 | |
| JPS6369975A (ja) | 気相成長装置 |